Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors (2024)

Maikap, S., Tzeng, P. J., Lee, H. Y., Wang, C. C., Tien, T. C., Lee, L. S., & Tsai, M. J. (2007). Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors. Applied Physics Letters, 91(4), Article 043114. https://doi.org/10.1063/1.2766680

Maikap, S. ; Tzeng, P. J. ; Lee, H. Y. et al. / Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors. In: Applied Physics Letters. 2007 ; Vol. 91, No. 4.

@article{ad07522bb6484b0ab1fe4725fa092359,

title = "Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors",

abstract = "The physical and electrical characteristics of atomic layer deposited TiN nanocrystals embedded in high- k Al2 O3 films in a metal/ Al2 O3 [TiN Al2 O3] Si O2 p-Si structure have been investigated. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy show the formation of tiny TiN nanocrystals embedded in Al2 O3 films after subsequent annealing treatment. The TiN nanocrystals with a high density of >1× 1012 cm2 and a small size of <3 nm have been observed. A large hysteresis memory window of ∼4.3 V at small sweeping gate voltage of 3 V has been observed as compared with a pure Al2 O3 charge trapping layer, due to highly charge confinement in the TiN metal nanocrystals. The hysteresis memory window of 1.4 V has also been observed under an extremely small sweeping gate voltage of 1 V. A large memory window of ∼3.9 V is observed after 10 years of retention. A maximum hysteresis memory window is limited by both of the nanocrystal density and leakage current at a high temperature annealing treatment of the TiN nanocrystal memory capacitors.",

author = "S. Maikap and Tzeng, {P. J.} and Lee, {H. Y.} and Wang, {C. C.} and Tien, {T. C.} and Lee, {L. S.} and Tsai, {M. J.}",

year = "2007",

doi = "10.1063/1.2766680",

language = "英语",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "4",

}

Maikap, S, Tzeng, PJ, Lee, HY, Wang, CC, Tien, TC, Lee, LS & Tsai, MJ 2007, 'Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors', Applied Physics Letters, vol. 91, no. 4, 043114. https://doi.org/10.1063/1.2766680

Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors. / Maikap, S.; Tzeng, P. J.; Lee, H. Y. et al.
In: Applied Physics Letters, Vol. 91, No. 4, 043114, 2007.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors

AU - Maikap, S.

AU - Tzeng, P. J.

AU - Lee, H. Y.

AU - Wang, C. C.

AU - Tien, T. C.

AU - Lee, L. S.

AU - Tsai, M. J.

PY - 2007

Y1 - 2007

N2 - The physical and electrical characteristics of atomic layer deposited TiN nanocrystals embedded in high- k Al2 O3 films in a metal/ Al2 O3 [TiN Al2 O3] Si O2 p-Si structure have been investigated. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy show the formation of tiny TiN nanocrystals embedded in Al2 O3 films after subsequent annealing treatment. The TiN nanocrystals with a high density of >1× 1012 cm2 and a small size of <3 nm have been observed. A large hysteresis memory window of ∼4.3 V at small sweeping gate voltage of 3 V has been observed as compared with a pure Al2 O3 charge trapping layer, due to highly charge confinement in the TiN metal nanocrystals. The hysteresis memory window of 1.4 V has also been observed under an extremely small sweeping gate voltage of 1 V. A large memory window of ∼3.9 V is observed after 10 years of retention. A maximum hysteresis memory window is limited by both of the nanocrystal density and leakage current at a high temperature annealing treatment of the TiN nanocrystal memory capacitors.

AB - The physical and electrical characteristics of atomic layer deposited TiN nanocrystals embedded in high- k Al2 O3 films in a metal/ Al2 O3 [TiN Al2 O3] Si O2 p-Si structure have been investigated. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy show the formation of tiny TiN nanocrystals embedded in Al2 O3 films after subsequent annealing treatment. The TiN nanocrystals with a high density of >1× 1012 cm2 and a small size of <3 nm have been observed. A large hysteresis memory window of ∼4.3 V at small sweeping gate voltage of 3 V has been observed as compared with a pure Al2 O3 charge trapping layer, due to highly charge confinement in the TiN metal nanocrystals. The hysteresis memory window of 1.4 V has also been observed under an extremely small sweeping gate voltage of 1 V. A large memory window of ∼3.9 V is observed after 10 years of retention. A maximum hysteresis memory window is limited by both of the nanocrystal density and leakage current at a high temperature annealing treatment of the TiN nanocrystal memory capacitors.

UR - http://www.scopus.com/inward/record.url?scp=34547479883&partnerID=8YFLogxK

U2 - 10.1063/1.2766680

DO - 10.1063/1.2766680

M3 - 文章

AN - SCOPUS:34547479883

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 043114

ER -

Maikap S, Tzeng PJ, Lee HY, Wang CC, Tien TC, Lee LS et al. Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors. Applied Physics Letters. 2007;91(4):043114. doi: 10.1063/1.2766680